View QSB363C_1300089.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

SUBMINIATURE PLASTIC SILICON PHOTOTRANSISTOR QSB363C
PACKAGE DIMENSIONS
EMITTER
0.276 (7.0) MIN
0.087 (2.2) 0.071 (1.8) 0.024 (0.6) 0.016 (0.4) 0.074 (1.9) 0.019 (0.5) 0.012 (0.3)
.118 (3.0) .102 (2.6)
.059 (1.5) .051 (1.3) 0.055 (1.4)
SCHEMATIC
COLLECTOR
0.008 (0.21) 0.004 (0.11) 0.106 (2.7) 0.091 (2.3)
0.024 (0.6)
NOTES: 1. Dimensions are in inches (mm). 2. Tolerance of .010 (.25) on all non nominal dimensions unless otherwise specified.
EMITTER
DESCRIPTION
The QSB363C is a silicon phototransistor encapsulated in a clear transparent T-3/4 package.
FEATURES
* NPN Silicon Phototransistor * T-3/4 (2mm) Surface Mount Package * Medium Wide Beam Angle, 24 * Clear Plastic Package * Matched Emitters: QEB363 or QEB373 * Tape & Reel Option (See Tape & Reel Specifications) * Lead Form Options: Gullwing, Yoke, Z-Bend
2001 Fairchild Semiconductor Corporation DS300233 8/2/01
1 OF 5
www.fairchildsemi.com
SUBMINIATURE PLASTIC SILICON PHOTOTRANSISTOR QSB363C
ABSOLUTE MAXIMUM RATINGS
Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(2,3,4) Soldering Temperature (Flow)(2,3) Collector Emitter Voltage Emitter Collector Voltage Power Dissipation(1) (TA = 25C unless otherwise specified) Symbol TOPR TSTG TSOL-I TSOL-F VCE VEC PD Rating -40 to +85 -40 to +85 240 for 5 sec 260 for 10 sec 30 5 100 Unit C C C C V V mW
NOTES
1. Derate power dissipation linearly 1.33 mW/C above 25C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Pulse conditions: tp = 100 s, T = 10 ms. 5. = 940 nm, GaAs.
ELECTRICAL / OPTICAL CHARACTERISTICS
PARAMETER TEST CONDITIONS
(TA =25C)
MIN. TYP. MAX. UNITS
SYMBOL
PS
Peak Sensitivity Wavelength Reception Angle Dark Current Collector-Emitter Breakdown Emitter-Collector Breakdown On-State Collector Current Saturation Voltage Rise Time Fall Time VCE = 10 V, Ee = 0 IC = 1 mA IE = 100 A Ee = 0.5 mW/cm2 VCE = 5 V(5) Ee = 0.5 mW/cm2 IC = 0.1 mA(5) VCC = 5 V, RL = 100 IC = 0.2 mA
-- -- -- 30 4 0.7 -- -- --
880 12 -- -- -- -- -- 5 5
-- -- 100 -- -- -- 0.4 -- --
nm Deg. nA V V mA V
ID BVCEO BVECO IC(on) VCE (SAT) tr tf
s s
www.fairchildsemi.com
2 OF 5
8/2/01
DS300233
SUBMINIATURE PLASTIC SILICON PHOTOTRANSISTOR QSB363C
TYPICAL PERFORMANCE CURVES
Fig. 1 Collector Power Dissipation vs. Ambient Temperature
100 90 106 5
Fig. 2 Collector Dark Current vs. Ambient Temperature
Collector Dark Current (A)
Collector Power Dissipation (mW)
80 70 60 50 40 30 20 10 0 -25 0 25 50 75 85 100
2 107 5 2 108 5 2 109 5 2 1010
0 25 50 75 100
Ambient Temperature TA (C)
Ambient Temperature TA (C)
Fig. 3 Relative Collector Current vs. Ambient Temperature
160 140 VCE = 5 V Ee=1 mW/cm2 20 10
Fig. 4 Collector Current vs. Irradiance
VCE = 5 V TA = 25
Relative Collector Current (%)
120 100 80 60 40 20 0 0 10 20 30 40 50 60 70
Collector Current IC (mA)
5 2 1 0.5
0.2 0.1 0.1 0.2 0.5 1 2 5 10 20
Ambient Temperature TA (C)
Irradiance Ee (mW/cm2)
Fig. 5 Spectral Sensitivity
100 7 6
Fig. 6 Collector Current vs. Collector Emitter Voltage
Relative Sensitivity (%)
Collector Current IC (mA)
80
5 4 3 2 1 0
60
40
20
0 400 500 600 700 800 900 1000 1100
0
1
2
3
4
Wavelength
(nm)
Collector Emitter Voltage VCE (V)
DS300233
8/2/01
3 OF 5
www.fairchildsemi.com
SUBMINIATURE PLASTIC SILICON PHOTOTRANSISTOR QSB363C
GULL WING LEAD CONFIGURATION
0.166 (4.2)
FEATURES
* Three lead forming options: Gull Wing, Yoke and Z-Bend * Compatible with automatic placement equipment * Supplied on tape and reel or in bulk packaging
0.016 (0.4)
* Compatible with vapor phase reflow solder processes
0.020 (0.51)
ANODE 0.087 (2.2) 0.071 (1.8)
0.074 (1.9)
0.024 (0.6) .118 (3.0) .102 (2.6) 0.078 (2.0) 0.055 (1.4) 0.043 (1.1) 0.106 (2.7) 0.091 (2.3) 0.005 (0.13)
NOTES: (Applies to all package drawings) 1. Dimensions are in inches (mm). 2. Tolerance of .010 (.25) on all non nominal dimensions unless otherwise specified.
YOKE LEAD CONFIGURATION
Z-BEND LEAD CONFIGURATION
0.236 (6.0) 0.220 (5.6)
0.283 (7.2) 0.098 (2.5) 0.016 (0.4) 0.127 (3.25) 0.112 (2.85)
0.177 (4.5) 0.161 (4.1)
0.016 (0.4) ANODE 0.020 (0.5) 0.074 (1.9) 0.074 (1.9) 0.118 (3.0) 0.102 (2.6) 0.031 (0.8) 0.087 (2.2) 0.071 (1.8) 0.020 (0.5) ANODE 0.087 (2.2) 0.071 (1.8)
0.055 (1.4)
0.024 (0.6) .118 (3.0) 0.080 (2.0) .102 (2.6) 0.031 (0.8) 0.055 (1.4)
0.051 (1.3) 0.043 (1.1) 0.141 (3.6) 0.008 (0.2) 0.043 (1.1) 0.106 (2.7) 0.091 (2.3)
www.fairchildsemi.com
4 OF 5
8/2/01
DS300233
SUBMINIATURE PLASTIC SILICON PHOTOTRANSISTOR QSB363C
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
DS300233
8/2/01
5 OF 5
www.fairchildsemi.com

▲Up To Search▲

Price & Availability of QSB363C

	To Download QSB363C Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .